Global leader in designing and manufacturing of
high-performance semiconductor components, the Radio Frequency Micro Devices,
Inc, otherwise known as (RFMD), has unveiled a three-stage power amplifier (PA)
to boost Wireless Fidelity (Wi-Fi) tagged RFPA5200.
The senior manager, Communications at RFMD, Irma Swain,
confirmed that RFPA5200 is a three-stage power amplifier designed for
802.11b/g/n applications.
Swain also said that the integrated input and output 50Ω
match eliminates the need for any external matching components and greatly
reduces layout area, bill of materials (BOM) and manufacturability cost in the
customer application.
The RFPA5200, Swain said is manufactured on an advanced
InGaP heterojunction bipolar transistor (HBT) process.
According the manager, this PA is capable of achieving
linear power up to 27dBm with an Earned Value Managment Maturity Model Level-3
per cent (EVM < 3%) while maintaining excellent power added efficiency
(PAE).
The device, Swain added has been provided in a 4mm x 4mm x
1mm, 10-pin laminate package and it meets or exceeds the power requirements of
Institute of Electrical and Electronics Engineers (IEEE802.11b/g/n) WiFi Radio
Frequency (RF) systems.
DigitalSENSE Business News recalls that RFMD's products
enable worldwide mobility, provide enhanced connectivity and support advanced
functionality in the cellular handset, wireless infrastructure, wireless local
area network (WLAN), Community Antenna TV (CATV) cum broadband
and aerospace and defense markets.
Acclaimed RFMD is recognized for its diverse portfolio of
semiconductor technologies and RF systems expertise and is a preferred supplier
to the world's leading mobile device, customer premises and communications
equipment providers.
... Making SENSE of digital revolution!
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